FRAM (ferroelectric random-access memory) is a low-power non-volatile, high-performance memory that uses ferroelectric film as a capacitor for the storage of data. FRAM combines the advantages of conventional non-volatile memories (Flash and EEPROM) and high-speed RAM (SRAM and DRAM). The increase in demand for fast memory operations in smart card applications and security systems is a major factor contributing to the growth of ferroelectric RAM.
The advantages over other conventional memory technologies are the significant factor driving the growth of the FRAM market. The demand for FRAM is increasing rapidly in many applications that need low power, high performance, and high endurance. Moreover, due to rising developments in the electronic handheld devices, FRAM is predicted to spectate healthy demand in the near future.
Competitive Landscape: Cypress Semiconductor Corporations, Everspin Technologies Inc., Fujitsu Ltd, Future Electronics, LAPIS Semiconductor Co. Ltd, Symetrix Corporation, Texas Instruments Inc., Toshiba Corporation, Rohm Co., Ltd, Infineon Technologies Inc.
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Note – The Covid-19 (coronavirus) pandemic is impacting society and the overall economy across the world. The impact of this pandemic is growing day by day as well as affecting the supply chain. The COVID-19 crisis is creating uncertainty in the stock market, massive slowing of supply chain, falling business confidence, and increasing panic among the customer segments. The overall effect of the pandemic is impacting the production process of several industries. This report on ‘FRAM Market’ provides the analysis on impact on Covid-19 on various business segments and country markets. The reports also showcase market trends and forecast to 2027, factoring the impact of Covid -19 Situation.
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